Recent Progress in Silicon-based Spintronic Materials

This book covers the crucial aspects of theoretical and experimental approaches for Si-based spintronic materials. The theory parts emphasize on two first-principles methods — the GW method to improve the insulating gaps of the half metals which are a class of materials ideal for spintronic applications, and the linear response theory to calculate electric and magnetic susceptibilities. Three growth methods for doping transition metal elements in alloy and layered forms in Si will be focused on. Also three methods for characterization will be presented emphasizing on how to interpret experimental results. Finally, recent progress made in the Si-based spintronic materials will be discussed. This book is intended for researchers and graduate students who are interested in designing and growing new spintronic materials, in particular, silicon-based.

Contents:

• Spin-Based Materials:

  • Introduction
  • Crystals
  • Spin Dependent Interactions
  • Half-Metals

• Methods of Studying Spintronics:

  • Theory
  • Growth Methods
  • Characterization

• Progress in Si-Based Spintronics:

  • Dilute Doped Mn in Si
  • Si-Based Digital Ferromagnetic Heterostructure
  • Single Doping of Fe and Mn in Si
  • Trilayers
  • MnSi Clusters

Readership: Students and professionals in condensed matter, materials physics, and spintronics.
Key Features:

• The authors explain experimental and theoretical results in terms of physical pictures and hope to promote in depth understanding and to inspire new way of thinking
• Graduate students will appreciate experimental results better as the authors show how to interpret the results relevant to what physically happens in the measured systems
• We try to avoid the use of jargon to describle the physical pictures