Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion
Nonfiction, Science & Nature, Technology, Material Science, Electronics, Circuits
| Author: | ISBN: | 9783319779942 | |
| Publisher: | Springer International Publishing | Publication: | May 12, 2018 |
| Imprint: | Springer | Language: | English |
| Author: | |
| ISBN: | 9783319779942 |
| Publisher: | Springer International Publishing |
| Publication: | May 12, 2018 |
| Imprint: | Springer |
| Language: | English |
This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.
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Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;
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Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion;
-
Enables design of smaller, cheaper and more efficient power supplies.
This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.
-
Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;
-
Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion;
-
Enables design of smaller, cheaper and more efficient power supplies.
