Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications

Nonfiction, Science & Nature, Technology, Electronics, Semiconductors, Circuits
Cover of the book Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications by Jacopo Franco, Ben Kaczer, Guido Groeseneken, Springer Netherlands
View on Amazon View on AbeBooks View on Kobo View on B.Depository View on eBay View on Walmart
Author: Jacopo Franco, Ben Kaczer, Guido Groeseneken ISBN: 9789400776630
Publisher: Springer Netherlands Publication: October 19, 2013
Imprint: Springer Language: English
Author: Jacopo Franco, Ben Kaczer, Guido Groeseneken
ISBN: 9789400776630
Publisher: Springer Netherlands
Publication: October 19, 2013
Imprint: Springer
Language: English

Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability.

This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated.

The extensive experimental datasets collected on a variety of processed 300mm wafers and presented here show the reliability improvement to be process - and architecture-independent and, as such, readily transferable to advanced device architectures as Tri-Gate (finFET) devices. We propose a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack.

The improved reliability properties here discussed strongly support (Si)Ge technology as a clear frontrunner for future CMOS technology nodes.

View on Amazon View on AbeBooks View on Kobo View on B.Depository View on eBay View on Walmart

Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability.

This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated.

The extensive experimental datasets collected on a variety of processed 300mm wafers and presented here show the reliability improvement to be process - and architecture-independent and, as such, readily transferable to advanced device architectures as Tri-Gate (finFET) devices. We propose a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack.

The improved reliability properties here discussed strongly support (Si)Ge technology as a clear frontrunner for future CMOS technology nodes.

More books from Springer Netherlands

Cover of the book Handbook of Child Maltreatment by Jacopo Franco, Ben Kaczer, Guido Groeseneken
Cover of the book Feminism, Science, and the Philosophy of Science by Jacopo Franco, Ben Kaczer, Guido Groeseneken
Cover of the book Human Law and Computer Law: Comparative Perspectives by Jacopo Franco, Ben Kaczer, Guido Groeseneken
Cover of the book Micromechanics and Microactuators by Jacopo Franco, Ben Kaczer, Guido Groeseneken
Cover of the book Paleontology and Geology of Laetoli: Human Evolution in Context by Jacopo Franco, Ben Kaczer, Guido Groeseneken
Cover of the book Communist China and Tibet by Jacopo Franco, Ben Kaczer, Guido Groeseneken
Cover of the book Phenomenology and Existentialism in the Twenthieth Century by Jacopo Franco, Ben Kaczer, Guido Groeseneken
Cover of the book Progress in Digital Angiocardiography by Jacopo Franco, Ben Kaczer, Guido Groeseneken
Cover of the book Crosscurrents in Phenomenology by Jacopo Franco, Ben Kaczer, Guido Groeseneken
Cover of the book Chemistry and Technology of Printing and Imaging Systems by Jacopo Franco, Ben Kaczer, Guido Groeseneken
Cover of the book The Chronically Mentally Ill by Jacopo Franco, Ben Kaczer, Guido Groeseneken
Cover of the book Pharmacology and Abuse of Cocaine, Amphetamines, Ecstasy and Related Designer Drugs by Jacopo Franco, Ben Kaczer, Guido Groeseneken
Cover of the book School Leadership Effects Revisited by Jacopo Franco, Ben Kaczer, Guido Groeseneken
Cover of the book Navigating Time and Space in Population Studies by Jacopo Franco, Ben Kaczer, Guido Groeseneken
Cover of the book The Radical Choice and Moral Theory by Jacopo Franco, Ben Kaczer, Guido Groeseneken
We use our own "cookies" and third party cookies to improve services and to see statistical information. By using this website, you agree to our Privacy Policy