by
Jacopo Franco, Ben Kaczer, Guido Groeseneken
Language: English
Release Date: October 19, 2013
Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10...