Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors

Nonfiction, Science & Nature, Technology, Nanotechnology, Science, Physics, Solid State Physics
Cover of the book Thermoelectrical Effect in SiC for High-Temperature MEMS Sensors by Toan Dinh, Nam-Trung Nguyen, Dzung Viet Dao, Springer Singapore
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Author: Toan Dinh, Nam-Trung Nguyen, Dzung Viet Dao ISBN: 9789811325717
Publisher: Springer Singapore Publication: October 5, 2018
Imprint: Springer Language: English
Author: Toan Dinh, Nam-Trung Nguyen, Dzung Viet Dao
ISBN: 9789811325717
Publisher: Springer Singapore
Publication: October 5, 2018
Imprint: Springer
Language: English

This book presents the fundamentals of the thermoelectrical effect in silicon carbide (SiC), including the thermoresistive, thermoelectric, thermocapacitive and thermoelectronic effects. It summarizes the growth of SiC, its properties and fabrication processes for SiC devices and introduces the thermoelectrical sensing theories in different SiC morphologies and polytypes. Further, it reviews the recent advances in the characterization of the thermoelectrical effect in SiC at high temperatures. Discussing several desirable features of thermoelectrical SiC sensors and recent developments in these sensors, the book provides useful guidance on developing high sensitivity and linearity, fast-response SiC sensing devices based on thermoelectrical effects.

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This book presents the fundamentals of the thermoelectrical effect in silicon carbide (SiC), including the thermoresistive, thermoelectric, thermocapacitive and thermoelectronic effects. It summarizes the growth of SiC, its properties and fabrication processes for SiC devices and introduces the thermoelectrical sensing theories in different SiC morphologies and polytypes. Further, it reviews the recent advances in the characterization of the thermoelectrical effect in SiC at high temperatures. Discussing several desirable features of thermoelectrical SiC sensors and recent developments in these sensors, the book provides useful guidance on developing high sensitivity and linearity, fast-response SiC sensing devices based on thermoelectrical effects.

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