Nonvolatile Memory Design

Magnetic, Resistive, and Phase Change

Nonfiction, Computers, Advanced Computing, Engineering, Computer Engineering, Science & Nature, Technology, Electronics, Circuits, Electricity
Cover of the book Nonvolatile Memory Design by Hai Li, Yiran Chen, CRC Press
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Author: Hai Li, Yiran Chen ISBN: 9781351834193
Publisher: CRC Press Publication: December 19, 2017
Imprint: CRC Press Language: English
Author: Hai Li, Yiran Chen
ISBN: 9781351834193
Publisher: CRC Press
Publication: December 19, 2017
Imprint: CRC Press
Language: English

The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.

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The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.

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