Magnetic Memory

Fundamentals and Technology

Nonfiction, Science & Nature, Technology, Electronics, Optoelectronics, Science
Cover of the book Magnetic Memory by Denny D. Tang, Yuan-Jen Lee, Cambridge University Press
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Author: Denny D. Tang, Yuan-Jen Lee ISBN: 9780511849923
Publisher: Cambridge University Press Publication: April 22, 2010
Imprint: Cambridge University Press Language: English
Author: Denny D. Tang, Yuan-Jen Lee
ISBN: 9780511849923
Publisher: Cambridge University Press
Publication: April 22, 2010
Imprint: Cambridge University Press
Language: English

If you are a semiconductor engineer or a magnetics physicist developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and how they are related to memory performance, characterization methods of magnetic films, and tunneling magnetoresistance effect devices. It also covers memory cell options, array architecture, circuit models, and read-write engineering issues. You'll understand the soft fail nature of magnetic memory, which is very different from that of semiconductor memory, as well as methods to deal with the issue. You'll also get invaluable problem-solving insights from real-world memory case studies. This is an essential book for semiconductor engineers who need to understand magnetics, and for magnetics physicists who work with MRAM. It is also a valuable reference for graduate students working in electronic/magnetic device research.

View on Amazon View on AbeBooks View on Kobo View on B.Depository View on eBay View on Walmart

If you are a semiconductor engineer or a magnetics physicist developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and how they are related to memory performance, characterization methods of magnetic films, and tunneling magnetoresistance effect devices. It also covers memory cell options, array architecture, circuit models, and read-write engineering issues. You'll understand the soft fail nature of magnetic memory, which is very different from that of semiconductor memory, as well as methods to deal with the issue. You'll also get invaluable problem-solving insights from real-world memory case studies. This is an essential book for semiconductor engineers who need to understand magnetics, and for magnetics physicists who work with MRAM. It is also a valuable reference for graduate students working in electronic/magnetic device research.

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