Fundamentals of Modern VLSI Devices

Nonfiction, Science & Nature, Technology, Electronics, Optoelectronics, Science
Cover of the book Fundamentals of Modern VLSI Devices by Yuan Taur, Tak H. Ning, Cambridge University Press
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Author: Yuan Taur, Tak H. Ning ISBN: 9780511699399
Publisher: Cambridge University Press Publication: May 2, 2013
Imprint: Cambridge University Press Language: English
Author: Yuan Taur, Tak H. Ning
ISBN: 9780511699399
Publisher: Cambridge University Press
Publication: May 2, 2013
Imprint: Cambridge University Press
Language: English

Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.

View on Amazon View on AbeBooks View on Kobo View on B.Depository View on eBay View on Walmart

Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.

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