Frontiers in Electronics
Advanced Modeling of Nanoscale Electron Devices
Nonfiction, Science & Nature, Technology, Nanotechnology, Electronics, Circuits
| Author: | Benjamin Iñiguez, Tor A Fjeldly | ISBN: | 9789814583206 |
| Publisher: | World Scientific Publishing Company | Publication: | January 10, 2014 |
| Imprint: | WSPC | Language: | English |
| Author: | Benjamin Iñiguez, Tor A Fjeldly |
| ISBN: | 9789814583206 |
| Publisher: | World Scientific Publishing Company |
| Publication: | January 10, 2014 |
| Imprint: | WSPC |
| Language: | English |
This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport modeling for these devices, and relationships between them. In particular, the issue of quantum transport approaches, analytical predictive 2D/3D modeling and design-oriented compact modeling. It should be of interests to researchers working on modeling at any level, to provide them with a clear explanation of theapproaches used and the links with modeling techniques for either higher or lower levels.
Contents:
- Monte-Carlo Simulation of Ultra-Thin Film Silicon-on-Insulator MOSFETs (F Gámiz, C Sampedro, L Donetti and A Godoy)
- Analytical Models and Electrical Characterisation of Advanced MOSFETs in the Quasi-Ballistic Regime (R Clerc and G Ghibaudo)
- Physics Based Analytical Modeling of Nanoscale Multigate MOSFETs (T A Fjeldly and U Monga)
- Compact Modeling of Double and Tri-Gate MOSFETs (B Iñiguez, R Ritzenthaler and F Lime)
Readership: Scientists, engineers, research leaders, and even investors interested in microelectronics, nanoelectronics, and optoelectronics. It is also recommended to graduate students working in these fields.
Key Features:
- This book is part of the Selected Topics in Electronics and Systems edited by Sorin Cristoloveanu (Grenoble INP – Minatec, France) and Michael Shur (Rensselaer Polytechnic Institute, USA)
- Nanoscale Electron Devices started with a big bang but over the years there are still many challenges unsolved which prevent it from becoming mainstream. This book reignites the interests on research works on different modeling levels for nanoscale semiconductor devices, in particular different nanoscale MOS structures (Single- and Multi-Gate MOSFETs)
- The book is well written, and targeting at graduate students, faculty and researchers working in MOSFETs
This book consists of four chapters to address at different modeling levels for different nanoscale MOS structures (Single- and Multi-Gate MOSFETs). The collection of these chapters in the book are attempted to provide a comprehensive coverage on the different levels of electrostatics and transport modeling for these devices, and relationships between them. In particular, the issue of quantum transport approaches, analytical predictive 2D/3D modeling and design-oriented compact modeling. It should be of interests to researchers working on modeling at any level, to provide them with a clear explanation of theapproaches used and the links with modeling techniques for either higher or lower levels.
Contents:
- Monte-Carlo Simulation of Ultra-Thin Film Silicon-on-Insulator MOSFETs (F Gámiz, C Sampedro, L Donetti and A Godoy)
- Analytical Models and Electrical Characterisation of Advanced MOSFETs in the Quasi-Ballistic Regime (R Clerc and G Ghibaudo)
- Physics Based Analytical Modeling of Nanoscale Multigate MOSFETs (T A Fjeldly and U Monga)
- Compact Modeling of Double and Tri-Gate MOSFETs (B Iñiguez, R Ritzenthaler and F Lime)
Readership: Scientists, engineers, research leaders, and even investors interested in microelectronics, nanoelectronics, and optoelectronics. It is also recommended to graduate students working in these fields.
Key Features:
- This book is part of the Selected Topics in Electronics and Systems edited by Sorin Cristoloveanu (Grenoble INP – Minatec, France) and Michael Shur (Rensselaer Polytechnic Institute, USA)
- Nanoscale Electron Devices started with a big bang but over the years there are still many challenges unsolved which prevent it from becoming mainstream. This book reignites the interests on research works on different modeling levels for nanoscale semiconductor devices, in particular different nanoscale MOS structures (Single- and Multi-Gate MOSFETs)
- The book is well written, and targeting at graduate students, faculty and researchers working in MOSFETs
