by
Bernard Dieny, Ronald B. Goldfarb, Kyung-Jin Lee
Language: English
Release Date: November 15, 2016
Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability....