5G and E-Band Communication Circuits in Deep-Scaled CMOS

Nonfiction, Science & Nature, Technology, Electronics, Circuits, Computers, Advanced Computing, Engineering, Computer Architecture
Cover of the book 5G and E-Band Communication Circuits in Deep-Scaled CMOS by Marco Vigilante, Patrick Reynaert, Springer International Publishing
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Author: Marco Vigilante, Patrick Reynaert ISBN: 9783319726465
Publisher: Springer International Publishing Publication: February 7, 2018
Imprint: Springer Language: English
Author: Marco Vigilante, Patrick Reynaert
ISBN: 9783319726465
Publisher: Springer International Publishing
Publication: February 7, 2018
Imprint: Springer
Language: English

This book discusses design techniques, layout details and measurements of several key analog building blocks that currently limit the performance of 5G and E-Band transceivers implemented in deep-scaled CMOS. The authors present recent developments in low-noise quadrature VCOs and tunable inductor-less frequency dividers. Moreover, the design of low-loss broadband transformer-based filters that realize inter-stage matching, power division/combining and impedance transformation is discussed in great detail. The design and measurements of a low-noise amplifier, a downconverter and a highly-linear power amplifier that leverage the proposed techniques are shown. All the prototypes were realized in advanced nanometer scaled CMOS technologies without RF thick to metal option.

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This book discusses design techniques, layout details and measurements of several key analog building blocks that currently limit the performance of 5G and E-Band transceivers implemented in deep-scaled CMOS. The authors present recent developments in low-noise quadrature VCOs and tunable inductor-less frequency dividers. Moreover, the design of low-loss broadband transformer-based filters that realize inter-stage matching, power division/combining and impedance transformation is discussed in great detail. The design and measurements of a low-noise amplifier, a downconverter and a highly-linear power amplifier that leverage the proposed techniques are shown. All the prototypes were realized in advanced nanometer scaled CMOS technologies without RF thick to metal option.

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